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PD - 90418C
POWER MOSFET SURFACE MOUNT(SMD-1)
Product Summary
Part Number
IRFN450
IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
RDS(on)
0.415
ID
12A
HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
SMD-1
Features:
n n n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Surface Mount Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 12 8.0 48 150 1.2 20 750 12 15 3.5 -55 to 150 300(for 5 seconds) 2.6 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
For footnotes refer to the last page
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1/25/01
IRFN450
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
500 -- -- -- 2.0 6.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.68 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 2700 600 240 -- -- 0.415 0.515 4.0 -- 25 250 100 -100 120 19 70 35 190 170 130 -- -- -- -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID = 8.0A VGS = 10V, ID = 12A VDS = VGS, ID = 250A VDS > 15V, IDS = 8.0A VDS= 400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 12A VDS =250V VDD = 250V, ID = 12A, VGS =10V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
nA nC
ns
nH
pF
Measured from the center of drain pad to center of source pad. VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12 48 1.7 1600 14
Test Conditions
A
V nS C Tj = 25C, IS = 12A, VGS = 0V Tj = 25C, IF = 12A, di/dt 100A/s VDD 30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
-- -- -- 3.0 0.83 --
C/W
Test Conditions
Soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRFN450
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFN450
13a & b
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFN450
V DS VGS RG
RD
D.U.T.
+
-V DD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFN450
15V
VDS
L
D R IV E R
RG
20V 1
D .U .T .
IA S tp
+ - VD D
A
0 .01
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V 0
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRFN450
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 10.4mH Peak IL = 12A, VGS = 10V
ISD 12A, di/dt 130A/s,
VDD 500V, TJ 150C
Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions -- SMD-1
PAD ASSIGNMENTS 1- DRAIN 2- GATE 3- SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/02
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